Title :
Temperature dependence of the high-field velocity of electrons in n GaAs
Author :
Houston, P.A. ; Evans, A.G.R.
Author_Institution :
University of Strathclyde, Department of Natural Philosophy, Glasgow, UK
Abstract :
The drift velocity of electrons at high electric fields has been measured in n GaAs by the time-of-flight technique. The range of electric fields used was 20 to 85 kV/cm and the experiments were performed at temperatures of 158, 300, 340 and 400 K. All the results show the velocity to decrease slowly as the field is increased.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; high field effects; drift velocity; electrons; high electric fields; n-GaAs; temperature dependence; time of flight technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750160
