• DocumentCode
    927749
  • Title

    Temperature dependence of the high-field velocity of electrons in n GaAs

  • Author

    Houston, P.A. ; Evans, A.G.R.

  • Author_Institution
    University of Strathclyde, Department of Natural Philosophy, Glasgow, UK
  • Volume
    11
  • Issue
    10
  • fYear
    1975
  • Firstpage
    210
  • Lastpage
    211
  • Abstract
    The drift velocity of electrons at high electric fields has been measured in n GaAs by the time-of-flight technique. The range of electric fields used was 20 to 85 kV/cm and the experiments were performed at temperatures of 158, 300, 340 and 400 K. All the results show the velocity to decrease slowly as the field is increased.
  • Keywords
    III-V semiconductors; carrier mobility; gallium arsenide; high field effects; drift velocity; electrons; high electric fields; n-GaAs; temperature dependence; time of flight technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750160
  • Filename
    4236675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=927749