• DocumentCode
    927798
  • Title

    Transistor Forming Effects in n-Type Germanium

  • Author

    Valdes, L.B.

  • Author_Institution
    Bell Telephone Laboratories, Murray Hill Laboratory, Murray Hill, N.J.
  • Volume
    40
  • Issue
    4
  • fYear
    1952
  • fDate
    4/1/1952 12:00:00 AM
  • Firstpage
    445
  • Lastpage
    448
  • Abstract
    Some of the effects of electrical forming of the collector of an n-type germanium transistor are discussed. Evidence is presented for the existence of a region of p-type germanium underneath the formed electrode, together with some indication of the size of the formed region. These experiments lend support to the p-n hook mechanism in that they explain the observed high values of alpha in transistors. This relation is discussed.
  • Keywords
    Electrodes; Energy states; Etching; Germanium; Grain boundaries; Laboratories; Micromanipulators; Probes; Rectifiers; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1952.274038
  • Filename
    4050968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=927798