DocumentCode
927825
Title
An investigation of the relation between the interface state and 1/f noise behaviors in silicon MOS transistor with the negative bias-heat treatment
Author
Kobayashi, I. ; Nakahara, M. ; Atsumi, M.
Author_Institution
Fujitsu Ltd., Kobe, Japan
Volume
61
Issue
8
fYear
1973
Firstpage
1145
Lastpage
1146
Abstract
A significant relation has been found between a change in interface state density distribution and an unusual 1/f noise behavior resulting from the field intensity used for negative bias-heat treatment by elaborately fabricated samples coupled with the MOS conductance technique.
Keywords
Density measurement; Energy measurement; Impurities; Interface states; MOS capacitors; MOSFETs; Noise level; Noise measurement; Photonic band gap; Silicon;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1973.9221
Filename
1451151
Link To Document