Title :
Addendum to "Design of Microwave GaAs MESFET\´s for Broad-Band Low-Noise Amplifiers"
fDate :
10/1/1981 12:00:00 AM
Abstract :
It has been called to the author´s attention that (3) in the above paper appears to be inadequate, especially for scaling.
Keywords :
Capacitance-voltage characteristics; Dielectric constant; Dielectric substrates; Gallium arsenide; Impedance; Low-noise amplifiers; MESFETs; Microstrip; Microwave FETs; Microwave theory and techniques;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1981.1130512
