DocumentCode :
927974
Title :
Transient limitations of bipolar transistors under a step-function emitter-base voltage excitation
Author :
Das, Mukunda B. ; Humenick, John M.
Author_Institution :
Pennsylvania State University, University Park, Pa.
Volume :
61
Issue :
8
fYear :
1973
Firstpage :
1163
Lastpage :
1165
Abstract :
The drift-cum-diffusion mechanimn in the transistor base sets the ultimate speed of the transient response of its collector current when excited by an emitter-base step-function voltage. The response characteristics are calculated with reference to an analog RC transmission line and used to determine the frequency-domain response.
Keywords :
Bipolar transistors; Capacitance; Delay effects; Differential equations; Impedance; Impurities; Resistors; Transient response; Transmission lines; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1973.9235
Filename :
1451165
Link To Document :
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