• DocumentCode
    928001
  • Title

    Electrical and optical properties of Gen--SnO2 photodetectors

  • Author

    Manifacier, J.C. ; Gaillard, Sebastien ; Fillard, J.P.

  • Author_Institution
    Université des Sciences et Techniques du Languedoc, Centre d´Ã\x89tudes d´Electronique des Solides, Laboratoire associé au CNRS, Montpellier, France
  • Volume
    11
  • Issue
    11
  • fYear
    1975
  • Firstpage
    241
  • Lastpage
    242
  • Abstract
    A solid-state photodetector is proposed using an SnO2 transparent layer as a constitutive element in conjunction with a Gen substrate. Special attention is paid to the photo-conductive mode (reverse-biased diode). The electrical characteristics and optical spectral responsivity are reported, noise measurements show a typical contact effect and allow n.e.p. determination. From measured specifications, it appears that, in comparison with commercially available photodiodes, such a structure could be of interest.
  • Keywords
    elemental semiconductors; germanium; photodetectors; photodiodes; semiconductor device manufacture; tin compounds; SnO2 transparent layer; n-Ge substrate; optical spectral responsivity; photoconductive mode; photodetectors; reverse biased diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750182
  • Filename
    4236698
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928001