DocumentCode
928117
Title
Technical Memorandum Investigation of nonreciprocal Fin-Line devices
Author
Tedjini, Smail ; Pic, E.
Author_Institution
ENSERG, Institute National Polytechnique, Laboratoire d´Electromagnetisme et micro-ondes, Grenoble, France
Volume
131
Issue
1
fYear
1984
fDate
2/1/1984 12:00:00 AM
Firstpage
61
Lastpage
63
Abstract
The paper describes a fin-line isolator using a semiconductor layer as an anisotropic media. The spectral-domain method has been extended to suit to our problem. The semiconductor layer is taken into account through its conductivity tensor. Two semiconductors, GaAs and InSb, have been considered in the calculations and experiments. The frequency range considered is the Ka-band (26¿¿40 GHz). It is pointed out that InSb is the best choice.
Keywords
fin lines; microwave isolators; waveguide components; waveguide theory; GaAs; InSb; Ka-band; anisotropic media; conductivity tensor; fin-line isolator; nonreciprocal fin-line devices; semiconductor layer; spectral-domain method;
fLanguage
English
Journal_Title
Microwaves, Optics and Antennas, IEE Proceedings H
Publisher
iet
ISSN
0143-7097
Type
jour
DOI
10.1049/ip-h-1.1984.0012
Filename
4646048
Link To Document