Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability

Author

Jourdan, N. ; Alexandre, F. ; Dubon-Chevallier, Chantal ; Dangla, Jean ; Gao, Y.

Author_Institution

Lab. de Bagneux, CNET, France

Volume

39

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

767

Lastpage

770

Abstract

In this study, the increase of V/III flux ratio combined with a low growth temperature has been found to lead to a drastic improvement of the HBT current gain, and also to avoid the base dopant (Be) diffusion during high post-growth process annealing. The optimized growth conditions have made it possible to obtain a very high value (70) for the maximum current gain with a base sheet resistance of 145 Ω/□, for heavily doped base HBT devices processed with a conventional low-temperature double-mesa technology. The authors have also demonstrated operational heavily doped HBT devices processed with an implanted high-temperature technology and exhibiting a DC current gain as high as 30

Keywords

III-V semiconductors; aluminium compounds; annealing; beryllium; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; ion implantation; molecular beam epitaxial growth; semiconductor growth; DC current gain; GaAs:Be-GaAlAs; HBT; MBE; base sheet resistance; current gain; device performances; heavily doped base; high thermal stability; implanted high-temperature technology; low growth temperature; low-temperature double-mesa technology; maximum current gain; optimized growth conditions; post-growth process annealing; Contacts; Doping; Etching; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Rapid thermal annealing; Substrates; Temperature; Thermal stability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.127463

Filename

127463