Title :
Majority-carrier traps in n- and p-type epitaxial GaAs
Author :
Hasegawa, Fumihiro ; Majerfeld, A.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Majority-carrier traps are characterised for n- and p-type GaAs. Bulk and vapour-phase-epitaxial n GaAs show the same electron-trap centre (0.83 eV). No electron traps were detected in liquid-phase epitaxial n GaAs, but three hole trap centres (0.64, 0.44 and ~ 0.6 eV) were found in p GaAs. The capture cross-section and density of these centres have also been determined.
Keywords :
III-V semiconductors; electron traps; gallium arsenide; III-V semiconductors; capture cross section; epitaxial semiconductors; majority carrier traps; n-GaAs; p-GaAs; trap density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750217
