DocumentCode
928469
Title
The impact of three-dimensional effects on EEPROM cell performance
Author
Linton, Thomas D., Jr. ; Blakey, Peter A. ; Neikirk, Dean P.
Author_Institution
MasPar Comput. Corp., Sunnyvale, CA, USA
Volume
39
Issue
4
fYear
1992
fDate
4/1/1992 12:00:00 AM
Firstpage
843
Lastpage
850
Abstract
Device simulation is used to investigate three-dimensional effects in small electrically erasable programmable read-only memory (EEPROM) cells. Threshold voltage, tunnel currents, write speed, and the effects of misregistration are characterized for a structurally parameterized generic FLOTOX EEPROM cell. The results indicate considerable sensitivity to three-dimensional effects. Design insights for small EEPROM cells are discussed
Keywords
EPROM; digital simulation; tunnelling; EEPROM cell performance; FLOTOX cell; device simulation; misregistration; three-dimensional effects; threshold voltage; tunnel currents; write speed; Analytical models; Design methodology; EPROM; Geometry; Helium; Implants; Nonvolatile memory; Surface topography; Threshold voltage; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.127474
Filename
127474
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