Title :
The impact of three-dimensional effects on EEPROM cell performance
Author :
Linton, Thomas D., Jr. ; Blakey, Peter A. ; Neikirk, Dean P.
Author_Institution :
MasPar Comput. Corp., Sunnyvale, CA, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
Device simulation is used to investigate three-dimensional effects in small electrically erasable programmable read-only memory (EEPROM) cells. Threshold voltage, tunnel currents, write speed, and the effects of misregistration are characterized for a structurally parameterized generic FLOTOX EEPROM cell. The results indicate considerable sensitivity to three-dimensional effects. Design insights for small EEPROM cells are discussed
Keywords :
EPROM; digital simulation; tunnelling; EEPROM cell performance; FLOTOX cell; device simulation; misregistration; three-dimensional effects; threshold voltage; tunnel currents; write speed; Analytical models; Design methodology; EPROM; Geometry; Helium; Implants; Nonvolatile memory; Surface topography; Threshold voltage; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
