DocumentCode :
928478
Title :
The use of single-carrier semiconductor model in wave propagation problems
Author :
Freire, G.F.
Volume :
61
Issue :
9
fYear :
1973
Firstpage :
1367
Lastpage :
1368
Abstract :
Conditions for neglecting the effects of hole motion in an intrinsic semiconductor subjected to a constant magnetic field are derived from the hydrodynamical equations for the charge carriers. Under the collision-dominated regime in semiconductor materials where the electron-hole mass ratio is very small, the applied magnetic field and electron drift velocities values are shown to be limited to prescribed ranges in order that a single stream model be valid.
Keywords :
Charge carrier processes; Charge carriers; Conducting materials; Cyclotrons; Electron mobility; Equations; Frequency; Magnetic fields; Network-on-a-chip; Semiconductor materials;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1973.9280
Filename :
1451210
Link To Document :
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