• DocumentCode
    928483
  • Title

    Surface morphology of liquid-phase-epitaxial InP

  • Author

    Guha, Saikat ; Majerfeld, A. ; Moyes, N. ; Robson, P.N.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    11
  • Issue
    14
  • fYear
    1975
  • Firstpage
    303
  • Lastpage
    304
  • Abstract
    It is shown that misorientation of a substrate from a lowest index plane even by 0.1° results in epitaxial layers having lamellar surface structure and indium inclusions. Smooth layers can be grown from a supercooled melt on nominally oriented (±1°) (111) B planes. For (100) substrates, exact orientation (±0.1°) and melt supercooling are necessary to grow smooth layers.
  • Keywords
    III-V semiconductors; crystal growth from melt; epitaxial growth; indium compounds; semiconductor growth; surface structure; epitaxial layers; lamellar surface structure; liquid phase epitaxial InP; supercooled melt; surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750229
  • Filename
    4236748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928483