Title :
Surface morphology of liquid-phase-epitaxial InP
Author :
Guha, Saikat ; Majerfeld, A. ; Moyes, N. ; Robson, P.N.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
It is shown that misorientation of a substrate from a lowest index plane even by 0.1° results in epitaxial layers having lamellar surface structure and indium inclusions. Smooth layers can be grown from a supercooled melt on nominally oriented (±1°) (111) B planes. For (100) substrates, exact orientation (±0.1°) and melt supercooling are necessary to grow smooth layers.
Keywords :
III-V semiconductors; crystal growth from melt; epitaxial growth; indium compounds; semiconductor growth; surface structure; epitaxial layers; lamellar surface structure; liquid phase epitaxial InP; supercooled melt; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750229
