Title :
A lifetime limitation of high-field GaAs devices
Author :
Hartnagel, H. ; Weiss, B.L.
Author_Institution :
Univ. of Newcastle upon Tyne, UK
Abstract :
From considerations of the piezoelectric effect it is shown that dislocations are generated by high fields such as those produced by the traveling dipole domain in a Gunn diode. This eventually causes failure of the device. The effects of heat generated in the active layer are shown to aggravate this phenomenon.
Keywords :
Conductors; Current density; Electric fields; Electromagnetic fields; Electron mobility; Equations; Gallium arsenide; Gunn devices; Kinetic theory; Load flow;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9283
