Detailed analysis of edge effects in SIMOX-MOS transistors

Author

Elewa, Tarek ; Kleveland, Bendik ; Cristoloveanu, Sorin ; Boukriss, Boubaker ; Chovet, Alain

Author_Institution

Inst. Nat. Polytech., Grenoble, France

Volume

39

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

874

Lastpage

882

Abstract

A comprehensive investigation of edge effects in LOCOS-isolated silicon-on-insulator devices is made by combining the measurements of the static characteristics, charge pumping, and noise. Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects are still detectable. Appropriate models are proposed to separate the edge contribution from those of the front and back interfaces. It is found that the defect density on the edges is inhomogeneous, increasing vertically from the top to the bottom of the film and laterally from the middle to the end of the channel. Slow traps are identified at the back interface, close to the source/drain junctions

Keywords

electron device noise; insulated gate field effect transistors; interface electron states; semiconductor device models; semiconductor-insulator boundaries; LOCOS isolated SOI devices; SIMOX-MOS transistors; charge pumping; defect density; edge effects; models; noise; slow interface traps; source/drain junctions; static characteristics; substrate bias; Charge measurement; Charge pumps; Current measurement; Doping; MOSFETs; Noise measurement; Semiconductor films; Silicon on insulator technology; Subthreshold current; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.127478

Filename

127478