Effect of rapid thermal reoxidation on the electrical properties of rapid thermally nitrided thin-gate oxides

Author

Joshi, Aniruddha B. ; Lo, G.O. ; Shih, D.K. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

39

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

883

Lastpage

892

Abstract

The authors report a systematic study of the impact of post-nitridation rapid thermal anneals in oxygen and nitrogen on the electrical properties of MOS devices with thin gate oxides. A comparative study of the two annealing ambients has led to the formulation of qualitative models to describe the charge trapping properties of the respective gate dielectrics. Roles of the post-nitridation anneals in altering the radiation and hot-electron sensitivity of the MOS devices are investigated and explained on the basis of structural changes in the gate oxides during nitridation and subsequent annealing. The performance and reliability of MOSFETs with reoxidized nitrided gate oxides are investigated. Overall, the results indicate that reoxidized nitrided oxides show improved charge trapping properties, better resistance to radiation and hot-carrier stress, and improved high-field electron mobility in MOSFETs

Keywords

X-ray effects; carrier mobility; electron traps; hot carriers; incoherent light annealing; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor devices; nitridation; oxidation; reliability; MOS devices; MOSFETs; RTN; RTO; Si-SiO₂; Si-SiO_xN_y; annealing ambients; charge trapping properties; electrical properties; gate dielectrics; high-field electron mobility; hot-electron sensitivity; models; nitridation; polysilicon gate MOS capacitors; post-nitridation rapid thermal anneals; radiation sensitivity; rapid thermal reoxidation; reliability; structural changes; thin-gate oxides; Dielectric substrates; Electron mobility; Electron traps; Hot carriers; Impurities; Ionizing radiation; MOS devices; Nitrogen; Rapid thermal annealing; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.127479

Filename

127479