Improvement of optical nonlinear response in GaAs/AlGaAs nipi-MOW structure with Au ohmic contact

Author

Ando, Hideki ; Oohashi, Hiromi ; Iwamura, Hideyuki ; Kanbe, H.

Author_Institution

NTT Basic Res. Labs., Tokyo, Japan

Volume

25

Issue

18

fYear

1989

Firstpage

1212

Lastpage

1214

Abstract

Experiments demonstrate that the optical nonlinear response in a GaAs/AlGaAs nipi-MQW structure can be improved by introducing ohmic contacts, which electrically connect n- and p-layers. The response time is reduced by more than two orders of magnitude because of the enhanced recombination rate of photoexcited carriers, whereas the figure of merit for absorptive nonlinearity sigma _eh is kept constant and is an order of magnitude larger than that in a conventional GaAs/AlGaAs MQW structure.

Keywords

III-V semiconductors; aluminium compounds; carrier lifetime; electron-hole recombination; frequency response; gallium arsenide; gold; integrated optoelectronics; nonlinear optics; ohmic contacts; semiconductor quantum wells; semiconductor-metal boundaries; Au ohmic contact; GaAs-AlGaAs-Au; III-V semiconductors; absorptive nonlinearity; integrated optoelectronics; multiple quantum well; n-i-p-i MQW structure; nonlinear optics; optical nonlinear response; optoelectronics; photoexcited carriers; recombination rate;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890813

Filename

43477