Title :
Characteristics of field-induced-drain (FID) poly-Si TFTs with high on/off current ratio
Author :
Tanaka, Keiji ; Nakazawa, Kenji ; Suyama, Shiro ; Kato, Kinya
Author_Institution :
NTT Interdisciplinary Res. Lab., Tokyo, Japan
fDate :
4/1/1992 12:00:00 AM
Abstract :
The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) with a field-induction-drain (FID) structure using an inversion layer as a drain are investigated. The FID structure not only reduces the anomalous leakage current, but also maintains a high on current. An off current of 1.5 pA/μm and an on/off current ratio of 107 (Vd=10, Vg =-20 V) are successfully obtained. These characteristics result from good junction characteristics between the p channel and n+ inversion layer. Reducing the threshold voltage of the FID region allows a simple circuit configuration for the FID TFTs
Keywords :
elemental semiconductors; inversion layers; leakage currents; silicon; thin film transistors; FID structure; Si; anomalous leakage current; circuit configuration; field induction drain structure; high on/off current ratio; inversion layer; off current; on current; polysilicon TFT; threshold voltage; Active matrix technology; Circuits; Insulation; Leakage current; Liquid crystal displays; Maintenance; Semiconductor films; Silicon; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
