Title :
Effect of dual implants into GaAs
Author :
Ambridge, T. ; Heckingbottom, R. ; Bell, E.C. ; Sealy, B.J. ; Stephens, K.G. ; Surridge, R.K.
Author_Institution :
Post Office, Research Department, London, UK
Abstract :
Enhanced donor activities have been obtained after annealing at 700°C for selenium implants into GaAs by implanting an equal dose of gallium together with the selenium. Donor concentration depth profiles, measured for both single and dual implants of 1×1013/cm2 and 2×1014/cm2 indicated that the increase in activity was mainly due to an increase in peak donor concentration for the dual implants compared with those measured for single implants.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; semiconductor doping; GaAs; Se implants; annealing; donor activities; donor concentration depth profiles; dual implants;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750241
