• DocumentCode
    928596
  • Title

    Continuum-miniband superlattice-base transistor with graded-gap electron injector

  • Author

    Beltram, F. ; Capasso, Federico ; Hutchinson, A.L. ; Malik, R.J.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    25
  • Issue
    18
  • fYear
    1989
  • Firstpage
    1219
  • Lastpage
    1220
  • Abstract
    A new superlattice-base unipolar transistor is reported. Electrons are injected via a graded-gap emitter into a miniband lying above the top of the barriers. By controlling the emitter-base voltage, strong quantum reflections from the minigaps and the associated negative transconductance are induced.
  • Keywords
    conduction bands; molecular beam epitaxial growth; negative resistance; semiconductor superlattices; transistors; MBE fabrication; continuum miniband; emitter-base voltage control; epitaxial growth; graded-gap electron injector; negative transconductance; quantum reflections; superlattice-base transistor; unipolar transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890817
  • Filename
    43481
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928596