Title :
Continuum-miniband superlattice-base transistor with graded-gap electron injector
Author :
Beltram, F. ; Capasso, Federico ; Hutchinson, A.L. ; Malik, R.J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A new superlattice-base unipolar transistor is reported. Electrons are injected via a graded-gap emitter into a miniband lying above the top of the barriers. By controlling the emitter-base voltage, strong quantum reflections from the minigaps and the associated negative transconductance are induced.
Keywords :
conduction bands; molecular beam epitaxial growth; negative resistance; semiconductor superlattices; transistors; MBE fabrication; continuum miniband; emitter-base voltage control; epitaxial growth; graded-gap electron injector; negative transconductance; quantum reflections; superlattice-base transistor; unipolar transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890817
