• DocumentCode
    928641
  • Title

    Critical thickness in strained-layer GaInAs/GaAs quantum well lasers

  • Author

    Shieh, C. ; Lee, Hongseok ; Mantz, J. ; Ackley, D. ; Engelmann, R.

  • Author_Institution
    Siemens Corp. Res. Inc., Princeton, NJ, USA
  • Volume
    25
  • Issue
    18
  • fYear
    1989
  • Firstpage
    1226
  • Lastpage
    1228
  • Abstract
    The critical thickness in strained-layer GaInAs/GaAs quantum well lasers was studied by measuring the dependence of the threshold current on the number of quantum wells. The critical thickness for 20% In composition was found to be around 30 nm, which is twice as large as predicted by the Matthews-Blakeslee model.
  • Keywords
    III-V semiconductors; annealing; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor junction lasers; GaInAs-GaAs; In composition; MBE growth; annealing; critical thickness; quantum well lasers; semiconductor lasers; strained-layer; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890822
  • Filename
    43486
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928641