Title :
Encapsulation of ion-implanted GaAs using native oxides
Author :
Sealy, B.J. ; D´Cruz, A.D.E.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
It was found that oxidation at 500 to 600°C produced uniform layers, which, when used as protective coatings for ion-implanted GaAs, gave rise to donor activity, but with poor reproducibility. The addition of a thin layer of evaporated aluminium to the oxide layer gave donor activities very similar to results obtained with other coating materials and with good reproducibility.
Keywords :
III-V semiconductors; encapsulation; gallium arsenide; passivation; protective coatings; donor activity; encapsulation; ion implanted GaAs; oxidation; protective coatings;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750247
