• DocumentCode
    928672
  • Title

    Encapsulation of ion-implanted GaAs using native oxides

  • Author

    Sealy, B.J. ; D´Cruz, A.D.E.

  • Author_Institution
    University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
  • Volume
    11
  • Issue
    15
  • fYear
    1975
  • Firstpage
    323
  • Lastpage
    324
  • Abstract
    It was found that oxidation at 500 to 600°C produced uniform layers, which, when used as protective coatings for ion-implanted GaAs, gave rise to donor activity, but with poor reproducibility. The addition of a thin layer of evaporated aluminium to the oxide layer gave donor activities very similar to results obtained with other coating materials and with good reproducibility.
  • Keywords
    III-V semiconductors; encapsulation; gallium arsenide; passivation; protective coatings; donor activity; encapsulation; ion implanted GaAs; oxidation; protective coatings;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750247
  • Filename
    4236767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928672