DocumentCode
928703
Title
Extremely high packaging densities by operating integrated circuits with r.f. power
Author
Krause, G.
Author_Institution
Siemens AG, Halbleiterwerk, Mÿnchen, West Germany
Volume
11
Issue
15
fYear
1975
Firstpage
327
Lastpage
328
Abstract
A binary circuit configuration in which the transistors operate with r.f. power is described. This mode of operation allows the use of very simple circuitry. I.C. configurations in which this principle is exploited to maximum advantage are proposed.
Keywords
monolithic integrated circuits; packaging; RF power; binary circuit configuration; high packaging densities; integrated circuits; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750250
Filename
4236770
Link To Document