DocumentCode
928740
Title
35-GHz transferred electron amplifiers
Author
Goldwasser, R.E. ; Rosztoczy, F.E.
Author_Institution
Varian Associates, Palo Alto, CA, USA
Volume
61
Issue
10
fYear
1973
Firstpage
1502
Lastpage
1504
Abstract
GaAs transferred electron amplifiers with 110-mW saturated power output at 35 GHz have been designed and fabricated. Small signal gain of 13 dB, 3-GHz bandwidth, and noise figures as low as 16.2 dB have been observed. Two basic amplifier designs which have been investigated are described.
Keywords
Doping; Electrons; Gunn devices; Laplace equations; Maxwell equations; Noise figure; Poisson equations; Power amplifiers; Substrates; Transforms;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1973.9305
Filename
1451235
Link To Document