• DocumentCode
    928802
  • Title

    An analytical expression for MOSFET gate leakage current

  • Author

    Negro, V.C. ; Goldstein, L.H.

  • Author_Institution
    U.S. Atomic Energy Commission, New York, N.Y.
  • Volume
    61
  • Issue
    10
  • fYear
    1973
  • Firstpage
    1509
  • Lastpage
    1510
  • Abstract
    Integral expressions for the gate leakage current in a MOSFET are derived on the basis of Schottky emission across the gate insulator and on the internal self-heating due to device power dissipation. Computer evaluation of these integrals yields gate leakage current curves that exhibit the same characteristics observed experimentally.
  • Keywords
    Boundary conditions; Dielectric constant; Dielectrics and electrical insulation; Leakage current; MOSFET circuits; Packaging; Power MOSFET; Temperature; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9311
  • Filename
    1451241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928802