Title :
An analytical expression for MOSFET gate leakage current
Author :
Negro, V.C. ; Goldstein, L.H.
Author_Institution :
U.S. Atomic Energy Commission, New York, N.Y.
Abstract :
Integral expressions for the gate leakage current in a MOSFET are derived on the basis of Schottky emission across the gate insulator and on the internal self-heating due to device power dissipation. Computer evaluation of these integrals yields gate leakage current curves that exhibit the same characteristics observed experimentally.
Keywords :
Boundary conditions; Dielectric constant; Dielectrics and electrical insulation; Leakage current; MOSFET circuits; Packaging; Power MOSFET; Temperature; Thermal conductivity; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9311
