Title :
Low-voltage scaled CMOS and BiCMOS digital circuits
Author :
Bellaouar, A. ; Embabi, S.H.K. ; Elmasry, M.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
4/1/1992 12:00:00 AM
Abstract :
A mixed two-dimensional numerical device/circuit simulation analysis of scaled BiCMOS and CMOS circuits is presented. Submicrometer processes with 0.4-μm design rules operating at a power supply down to 2.8 V are examined. It is shown that when subjected to scaling, conventional BiCMOS maintains its superior performance compared to that of CMOS even at scaled power supplies
Keywords :
BIMOS integrated circuits; CMOS integrated circuits; circuit analysis computing; digital integrated circuits; 0.4 micron; 2.8 V; BiCMOS digital circuits; CMOS digital circuits; design rules; low voltage scaling; mixed two-dimensional numerical device/circuit simulation; scaled power supplies; submicrometre processes; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Degradation; Digital circuits; Power supplies; Process design; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
