DocumentCode
929016
Title
Common-gate GaAs f.e.t. oscillator
Author
Omori, Mutsumi ; Nishimoto, C.
Author_Institution
Varian Associates, Palo Alto, USA
Volume
11
Issue
16
fYear
1975
Firstpage
369
Lastpage
371
Abstract
Frequency tuning, power and noise characteristics of a common-gate GaAs f.e.t. oscillator were investigated. By changing the common-gate lead inductance, the frequency was changed by almost two octaves. The f.m. noise of the low-Q factor f.e.t. oscillator was at the same level as that of a medium-Q factor GaAs impatt oscillator.
Keywords
field effect transistors; microwave oscillators; solid-state microwave circuits; common gate GaAs FET oscillator; frequency tuning; noise characteristics; power;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750282
Filename
4236805
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