Title :
A graphical method to determine the generation parameters from pulsed MIS capacitors
Author :
Kang, Jung S. ; Kim, Sang U. ; Schroder, Dieter K.
Author_Institution :
Intel Corp., Chandler, AZ, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
A graphical method for the determination of semiconductor generation parameters has been developed. This technique is based on two graphs which are plotted from a general expression of capacitance-time ( C-t) behavior and a measured C-t curve of a pulsed metal-insulator-semiconductor capacitor (MIS-C). The generation lifetime and the surface generation velocity obtained by this method agree very well with those obtained by the Zerbst technique
Keywords :
capacitance; carrier lifetime; metal-insulator-semiconductor devices; Zerbst technique; capacitance time behaviour; generation lifetime; generation parameters; graphical method; metal-insulator-semiconductor; pulsed MIS capacitors; semiconductor; surface generation velocity; Capacitance; Capacitors; Character generation; Genetic expression; Insulation; Pulse generation; Pulse measurements; Semiconductor devices; Solid state circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
