DocumentCode :
929032
Title :
The low-temperature behavior of thyristors
Author :
Menhart, Steve ; Hudgins, Jerry L. ; Portnoy, William M.
Author_Institution :
Dept. of Eng. Technol., Arkansas Univ., Little Rock, AR, USA
Volume :
39
Issue :
4
fYear :
1992
fDate :
4/1/1992 12:00:00 AM
Firstpage :
1011
Lastpage :
1013
Abstract :
The forward breakover voltage and forward conduction voltage drop of a thyristor have been measured as a function of decreasing temperature between 25°C and -180°C. These data are presented for a 1200-V, 560-A average, inverter thyristor. Both the measured and calculated forward breakover voltages exhibit negative temperature coefficients. The decrease in VBF at low temperatures necessitates that thyristors with overrated blocking voltages be used at these temperatures
Keywords :
electric potential; invertors; semiconductor device testing; thyristors; -180 to 25 degC; 1200 V; 560 A; forward breakover voltage; forward conduction voltage drop; inverter thyristor; low-temperature behavior; negative temperature coefficients; overrated blocking voltages; thyristors; Doping; Joining processes; MOS capacitors; Notice of Violation; Pulse generation; Pulse measurements; Temperature; Thyristors; Transient response; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.127497
Filename :
127497
Link To Document :
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