Title :
Accurate modeling of the source resistance in modulation-doped FETs
Author :
Fu, Shih-Tsang ; Das, Mukunda B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
A distributed multiple-layer transmission line (MTL) model has been developed for the source and drain ohmic contacts of modulation-doped FETs. Results based on the authors´ model clearly demonstrate that the source resistance in MODFETs cannot be estimated simply from a knowledge of the behavior of the series resistance in nongated TLM test structures. Differences between the results based on the MTL model and those obtained from the previously used lump-element contact end-resistance (LECR) model are explained
Keywords :
contact resistance; high electron mobility transistors; ohmic contacts; semiconductor device models; transmission line theory; MODFETs; distributed multiple layer transmission line model; drain ohmic contacts; modulation-doped FETs; source ohmic contacts; source resistance; Computerized monitoring; Conductivity; Contact resistance; Epitaxial layers; FETs; HEMTs; MODFETs; Metallization; Ohmic contacts; Transmission lines;
Journal_Title :
Electron Devices, IEEE Transactions on
