Title :
Comprehensive dynamic analysis of wirebonding on Cu/low-K wafers
Author :
Yeh, Chang-Lin ; Lai, Yi-Shao
Author_Institution :
Stress-Reliability Lab., Adv. Semicond. Eng. Inc., Kaohsiung, Taiwan
fDate :
5/1/2006 12:00:00 AM
Abstract :
Comprehensive dynamic analysis is performed in this paper to simulate wirebonding on Cu/low-K wafers, which involves both the impact and the ultrasonic vibration stages. After the impact stage, the contact region between the pad and the gold ball is welded to allow subsequent ultrasonic vibrations to take place. Parametric studies are carried out to investigate structural responses of the Cu/low-K layer due to variation of the moduli of Cu/low-K components.
Keywords :
copper; gold; impact (mechanical); lead bonding; vibrations; wafer bonding; Au; Cu; Cu/low-k layer; Cu/low-k wafers; dynamic analysis; gold ball; impact stage; structural responses; ultrasonic vibration; wire bonding; Analytical models; Copper; Gold; Integrated circuit interconnections; Numerical analysis; Parametric study; Performance analysis; Semiconductor device modeling; Transient analysis; Vibrations; Cu/low-K; explicit finite-element analysis; impact; ultrasonic vibration; wirebonding;
Journal_Title :
Advanced Packaging, IEEE Transactions on
DOI :
10.1109/TADVP.2006.871193
