Title :
GaAs varactor diode for u.h.f. t.v. tuners
Author :
Niikura, Ikuo ; Hara, Tohru
Author_Institution :
Matsushita Research Institute Tokyo Inc., Kawasaki, Japan
Abstract :
The design and fabrication of a GaAs varactor diode for u.h.f. t.v. tuners were carried out using a GaAs double epitaxial layer. The capacitance ratio of diode. C3/C25, is 6.0 and the series resistance at 470 MHz is 0.24 ¿. These characteristics are much better than those of an Si diode and well satisfy the requirements for t.v. tuners.
Keywords :
television receivers; tuning; varactors; GaAs varactor diode; TV tuners; UHF; design; fabrication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750296
