• DocumentCode
    929242
  • Title

    Dependence of transconductance on substrate bias in ultrathin silicon-on-insulator MOS transistors

  • Author

    Sturm, James C. ; Tokunaga, Kyoya

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., NJ, USA
  • Volume
    25
  • Issue
    18
  • fYear
    1989
  • Firstpage
    1233
  • Lastpage
    1234
  • Abstract
    A simple model is presented to explain the dependence of the transconductance on the substrate bias in ultrathin silicon-on-insulator MOS transistors. Good agreement with experimental data is found. The model can also be used to predict the dependence of transconductance on the underlying oxide thickness.
  • Keywords
    MOS integrated circuits; insulated gate field effect transistors; semiconductor device models; SOI MOSFET; Si; model; substrate bias; transconductance; ultrathin MOS transistors; underlying oxide thickness;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890827
  • Filename
    43491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=929242