Title :
High-power C band Read IMPATT diodes
Author :
Adlerstein, M.G. ; Wallace, R.N. ; Steele, S.R.
Author_Institution :
Raytheon Research Division, Waltham, USA
Abstract :
A GaAs multimesa Read IMPATT-diode structure has been developed for operation in C band. Such devices give reproducible oscillator power output levels in excess of 10 W c.w. at 5 GHz. Junction temperature rises less than1 80 deg C are observed during high-power operation. The diodes are constructed with an integral gold-plated heatsink and bonded with Au : Sn eutectic solder in a small package.
Keywords :
IMPATT diodes; solid-state microwave devices; 5 GHz; Au:Sn eutectic solder; GaAs; high power C-band Read IMPATT diode; junction temperature; oscillator power output levels;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750331
