DocumentCode
929621
Title
Mode Coupling Between Dielectric and Semiconductor Planar Waveguides
Author
Batchman, T.E. ; McWright, G.M.
Volume
30
Issue
4
fYear
1982
Firstpage
628
Lastpage
634
Abstract
Computer modeling studies on four-layer silicon-clad planar dielectric waveguides indicate that the attenuation and mode index behave as exponentially damped sinusoids when the silicon thickness is increased. This effect can be explained as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high refractive index silicon. Furthermore, the attenuation and mode index are significantly altered by conductivity changes in the silicon. An amplitude modulator and phase modulator have been proposed using these results. Predicted high attenuations in the device may be reduced significantly with a silicon dioxide buffer layer.
Keywords
Amplitude modulation; Attenuation; Conductivity; Dielectrics; Periodic structures; Phase modulation; Planar waveguides; Refractive index; Semiconductor waveguides; Silicon;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1982.1131108
Filename
1131108
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