• DocumentCode
    929663
  • Title

    Transit-time-induced microwave negative resistance in Ga1-xAlxas--GaAs heterostructure diodes

  • Author

    Sitch, J.E. ; Majerfeld, A. ; Robson, P.N. ; Hasegawa, Fumihiro

  • Author_Institution
    University of Sheffield, Department of Electronic and Electrical Engineering, Sheffield, UK
  • Volume
    11
  • Issue
    19
  • fYear
    1975
  • Firstpage
    457
  • Lastpage
    458
  • Abstract
    Following recent experimental observations by Immorlica and Pearson that the saturated drift velocity of electrons in Ga0.62Al0.38As is considerably lower than in GaAs, a heterostructure transit-time diode is proposed. The resulting device is shown to have a relatively large negative resistance, a small Q factor and low noise measure. Large-signal calculations predict a maximum efficiency of 18%.
  • Keywords
    p-n heterojunctions; semiconductor diodes; solid-state microwave devices; transit time devices; Ga1-xAlxA-GaAs heterostructure diodes; Q factor; efficiency; microwave transit time diode; saturated drift velocity of electrons; transit time induced microwave negative resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750351
  • Filename
    4236876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=929663