Title :
Low-resistivity n-type layers in InAsxP1-x by ion implantation
Author :
Davies, D.E. ; Kennedy, J.K. ; LOWE, L.F.
Author_Institution :
US Air Force Systems Command, Cambridge Research Laboratories, Bedford, USA
Abstract :
InAsxP1-x has been implanted with sulphur and silicon with the view of forming low-resistivity n-type layers. Resulting activity from 1015 cm-2 implants indicate SiO2 to be an adequate encapsulant at the required 700--750°C annealing. Sheet resistivities down to 2.5 to 3, 4 and 8Ω/□, respectively, are obtained for the three compositions InAs0.75P0.25, InAs0.5P0.5 and InAs0.2P0.8 investigated.
Keywords :
III-V semiconductors; electrical conductivity of solid semiconductors and insulators; indium compounds; ion implantation; semiconductor doping; InAsxP1-x; S; Si; SiO2; annealing; encapsulant; ion implantation; low resistivity n-type layers; sheet resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750355
