• DocumentCode
    929727
  • Title

    Low-resistivity n-type layers in InAsxP1-x by ion implantation

  • Author

    Davies, D.E. ; Kennedy, J.K. ; LOWE, L.F.

  • Author_Institution
    US Air Force Systems Command, Cambridge Research Laboratories, Bedford, USA
  • Volume
    11
  • Issue
    19
  • fYear
    1975
  • Firstpage
    462
  • Lastpage
    463
  • Abstract
    InAsxP1-x has been implanted with sulphur and silicon with the view of forming low-resistivity n-type layers. Resulting activity from 1015 cm-2 implants indicate SiO2 to be an adequate encapsulant at the required 700--750°C annealing. Sheet resistivities down to 2.5 to 3, 4 and 8Ω/□, respectively, are obtained for the three compositions InAs0.75P0.25, InAs0.5P0.5 and InAs0.2P0.8 investigated.
  • Keywords
    III-V semiconductors; electrical conductivity of solid semiconductors and insulators; indium compounds; ion implantation; semiconductor doping; InAsxP1-x; S; Si; SiO2; annealing; encapsulant; ion implantation; low resistivity n-type layers; sheet resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750355
  • Filename
    4236880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=929727