DocumentCode :
929863
Title :
Reliability of MOS LSl circuits
Author :
Colbourne, E. Denis ; Coverley, Gordon P. ; Behera, Saroj K.
Author_Institution :
Bowmar Canada Ltd., Ottawa, Ont., Canada
Volume :
62
Issue :
2
fYear :
1974
Firstpage :
244
Lastpage :
259
Abstract :
MOS LSI circuits share many of the reliability problem associated with discrete semiconductors and medium-scale integrated circuits. However, because of the added complexity, larger chip size, and higher densities of MOS LSI circuits, different approaches are needed. A close working relationship between the designer, manufacturer, and user-the reliability triangle--is needed to generate the manufacturing controls, testing methods, and reliability assessment procedures and to optimize the performance and reliability of the MOS LSI circuits. Using this approach, the MOS LSI circuit, having more functions per external connection, can provide a more reliable system than one of equal complexity, based on discrete devices or less complex integrated circuits. Specific areas of reliability such as pattern sensitivity, manufacturing controls, assembly, packaging, and electrical testing have also been discussed.
Keywords :
Assembly; Circuit testing; Integrated circuit reliability; Large scale integration; MOSFETs; Manufacturing; Packaging; Random access memory; Semiconductor device manufacture; Semiconductor device reliability;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1974.9412
Filename :
1451342
Link To Document :
بازگشت