• DocumentCode
    929920
  • Title

    Electrical characteristics of 500-bit Al-Al2O3-Al CCD shift registers

  • Author

    Collins, D.R. ; Rhines, W.C. ; Barton, J.B. ; Shortes, S.R. ; Brodersen, R.W. ; Tasch, A.F., Jr.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Tex.
  • Volume
    62
  • Issue
    2
  • fYear
    1974
  • Firstpage
    282
  • Lastpage
    284
  • Abstract
    Double-level metallization (Al-Al2O3-Al) 64-b and 500-b linear, n-channel, surface-channel charge-coupled device (CCD) shift registers (with 929 µm2(1.44 mil2) area per bit) show charge transfer efficiencies of 99.98 percent at 1-MHz data rates. Results indicate advantages for the Al-Al2O3-Al metallization system in ease of fabrication, reliability, clocking, charge carrying capability, and high-speed operation of large arrays.
  • Keywords
    Aluminum; Charge coupled devices; Charge transfer; Clocks; Electric variables; Electrodes; Fabrication; Metallization; Sea surface; Shift registers;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9419
  • Filename
    1451349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=929920