DocumentCode :
929920
Title :
Electrical characteristics of 500-bit Al-Al2O3-Al CCD shift registers
Author :
Collins, D.R. ; Rhines, W.C. ; Barton, J.B. ; Shortes, S.R. ; Brodersen, R.W. ; Tasch, A.F., Jr.
Author_Institution :
Texas Instruments Incorporated, Dallas, Tex.
Volume :
62
Issue :
2
fYear :
1974
Firstpage :
282
Lastpage :
284
Abstract :
Double-level metallization (Al-Al2O3-Al) 64-b and 500-b linear, n-channel, surface-channel charge-coupled device (CCD) shift registers (with 929 µm2(1.44 mil2) area per bit) show charge transfer efficiencies of 99.98 percent at 1-MHz data rates. Results indicate advantages for the Al-Al2O3-Al metallization system in ease of fabrication, reliability, clocking, charge carrying capability, and high-speed operation of large arrays.
Keywords :
Aluminum; Charge coupled devices; Charge transfer; Clocks; Electric variables; Electrodes; Fabrication; Metallization; Sea surface; Shift registers;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1974.9419
Filename :
1451349
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=929920
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