Title :
Efficiency limitation by transverse instability in Si IMPATT diodes
Author :
van Iperen, B.B.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Abstract :
Measurements of large-signal impedance, ac voltage and dc voltage V0versus dc current I0on Si p-n-n+IMPATT diodes in pulse operation (80 ns) suggest that the efficiency of Si IMPATT diodes is limited by instability effects causing a splitup into regions with different current densities. The effect is explained by considering the I0-V0curves at constant ac voltage. These can be S-shaped owing to impact ionization in the drift region.
Keywords :
Current density; Diodes; Electrical resistance measurement; Impact ionization; Impedance; Knee; Microwave theory and techniques; Power generation; Pulse measurements; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9420
