• DocumentCode
    929947
  • Title

    Efficiency limitation by transverse instability in Si IMPATT diodes

  • Author

    van Iperen, B.B.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, The Netherlands
  • Volume
    62
  • Issue
    2
  • fYear
    1974
  • Firstpage
    284
  • Lastpage
    285
  • Abstract
    Measurements of large-signal impedance, ac voltage and dc voltage V0versus dc current I0on Si p-n-n+IMPATT diodes in pulse operation (80 ns) suggest that the efficiency of Si IMPATT diodes is limited by instability effects causing a splitup into regions with different current densities. The effect is explained by considering the I0-V0curves at constant ac voltage. These can be S-shaped owing to impact ionization in the drift region.
  • Keywords
    Current density; Diodes; Electrical resistance measurement; Impact ionization; Impedance; Knee; Microwave theory and techniques; Power generation; Pulse measurements; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9420
  • Filename
    1451350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=929947