Title :
Hydrodynamic Simulations of Unitraveling-Carrier Photodiodes
Author :
Rahman, S. M Mahmudur ; Hjelmgren, Hans ; Vukusic, Josip ; Stake, Jan ; Andrekson, Peter A. ; Zirath, Herbert
Author_Institution :
Chalmers Univ. of Technol., Goteborg
Abstract :
We present simulated results of a unitraveling-carrier photodiode (UTC-PD) using the hydrodynamic carrier transportation model. A maximum responsivity of 0.25 A/W and a small-signal 3-dB bandwidth of 52 GHz were obtained for a 220-nm-thick InGaAs absorption layer. The physical properties of the UTC-PD have been investigated at different optical injection levels. Modulation of the energy-band profile due to the space charge effect has been observed at high injection level, and an electron velocity overshoot of 3 x 107 cm/s has been found to effectively delay the onset of space charge effects. Comparisons with reported simulated results using the drift-diffusion model as well as reported experimental results are presented. The results suggest the necessity of using the hydrodynamic transport equations to accurately model the UTC-PD. In addition, it has been corroborated that the photoresponse of the UTC-PD could be improved by incorporating a graded doping profile in the absorption layer.
Keywords :
III-V semiconductors; gallium arsenide; hydrodynamics; indium compounds; photodiodes; semiconductor device models; semiconductor heterojunctions; space charge; InGaAs; absorption layer; bandwidth 52 GHz; drift-diffusion model; energy-band profile; graded doping profile; hydrodynamic carrier transportation model; hydrodynamic simulation; hydrodynamic transport equations; photoresponse; semiconductor device modeling; semiconductor heterojunctions; size 220 nm; space charge effect; unitraveling-carrier photodiodes; Absorption; Bandwidth; Electron optics; Hydrodynamics; Indium gallium arsenide; Optical modulation; Photodiodes; Road transportation; Semiconductor process modeling; Space charge; Hot carriers; photodiodes (PDs); semiconductor device modeling; semiconductor heterojunctions;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2007.905885