DocumentCode :
930090
Title :
Stacked microstrip antenna for wideband and high gain
Author :
Nishiyama, E. ; Aikawa, M. ; Egashira, S.
Author_Institution :
Fac. of Sci. & Eng., Saga Univ., Japan
Volume :
151
Issue :
2
fYear :
2004
fDate :
4/1/2004 12:00:00 AM
Firstpage :
143
Lastpage :
148
Abstract :
The behaviour mechanism of the stacked antenna is synthetically clarified for the first time by investigating the results calculated using the FDTD method. The stacked microstrip antenna has particular characteristics, such as a high gain or a wide bandwidth. When the size of the parasitic patch, is nearly equal to the fed patch and the distance between the fed patch and the parasitic patch is approximately 0.1 wavelength, the bandwidth is increased. When that distance is approximately half a wavelength, the gain enhancement is obtained. The wide bandwidth and the gain enhancement are considered synthetically by the detailed investigation of calculated results including the near-field distributions. It is shown that the wide bandwidth and the gain enhancement are caused by a two-frequency resonance and leaky resonant cavity formation, respectively. The calculated input impedance and radiation patterns agree well with the experimental values.
Keywords :
antenna radiation patterns; cavity resonators; finite difference time-domain analysis; microstrip antennas; resonance; FDTD method; antenna radiation patterns; fed patch; gain enhancement; input impedance; leaky resonant cavity formation; near-field distributions; parasitic patch; stacked microstrip antenna; two-frequency resonance; wavelength; wide bandwidth;
fLanguage :
English
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings
Publisher :
iet
ISSN :
1350-2417
Type :
jour
DOI :
10.1049/ip-map:20040171
Filename :
1275418
Link To Document :
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