Title :
High-efficiency GaAs m.e.s.f.e.t. amplifiers
Author :
Huang, H.C. ; Drukier, I. ; Camisa, R.L. ; Narayan, S.Y. ; Jolly, S.T.
Author_Institution :
RCA Laboratories, David Sarnoff Research Center, Princeton, USA
Abstract :
High-efficiency c.w. amplification with GaAs m.e.s.f.e.t.s under class-B conditions has been demonstrated. Power added efficiencies as high as 68% at 4 GHz and 41% at 8 GHz have been achieved. Two-tone tests were carried out at 4 GHz. The power added efficiencies at the 3rd-order intermodulation levels of ¿20, ¿25 and ¿30 dB were 49, 40 and 35% respectively.
Keywords :
field effect transistors; microwave amplifiers; solid-state microwave circuits; solid-state microwave devices; 3rd order intermodulation levels; 4 GHz; 8 GHz; CW amplification; class-B conditions; high efficiency GaAs MESFET amplifier; power added efficiencies; two tone tests;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750392
