• DocumentCode
    930103
  • Title

    Effect of source lead inductance on the noise figure of a GaAs FET

  • Author

    Anastassiou, A. ; Strutt, M.J.O.

  • Author_Institution
    Swiss Federal Institute of Technology, Zurich, Switzerland
  • Volume
    62
  • Issue
    3
  • fYear
    1974
  • fDate
    3/1/1974 12:00:00 AM
  • Firstpage
    406
  • Lastpage
    408
  • Abstract
    The noise performance of a GaAs FET (series Gat. 1, Plessey, England), operating in the pinchoff mode and in the common-source configuration, is examined neglecting thermal effects due to the velocity saturation. The complete equivalent circuit of the transistor including all extrinsic and package elements is used to obtain the noise figure of the transistor in the frequency region between 0.5 and 4 GHz. All computations of the noise figure are made using the noise model of van der Ziel.
  • Keywords
    Circuit noise; Equations; Equivalent circuits; Feedback; Frequency; Gallium arsenide; Inductance; Microwave FETs; Noise figure; Packaging;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9435
  • Filename
    1451365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930103