Title :
Efficient transient analysis of transistor circuits from device fabrication data
Author :
Hajj, I. ; Roulston, D.J. ; Bryant, P.R.
Author_Institution :
University of Waterloo, Waterloo, Ont., Canada
fDate :
3/1/1974 12:00:00 AM
Abstract :
Tabulated values of transistor charge-current-voltage characteristics are generated directly from device process parameters An efficient numerical Laplace inversion method is used with a piecewise-linear approximation technique to obtain the time response of the transistor in a given circuit.
Keywords :
Admittance; Circuits; FETs; Fabrication; Frequency; Gallium arsenide; Inductance; Microwave transistors; Noise figure; Transient analysis;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9437
