Title :
High-speed n-a1 GaAs-p-GaAs electroluminescent diodes
Author :
Heinen, J. ; Harth, W.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik, Mÿnchen, West Germany
Abstract :
High-speed heterostructure-n-AlGaAs-p-GaAs electroluminescent diodes have been fabricated. Rise times of 2 ns and modulation cutoff frequencies of 360 MHz have been achieved.
Keywords :
light emitting diodes; optical communication equipment; high speed heterostructure electroluminescence diode; modulation cutoff frequencies; n-AlGaAs-p-GaAs; rise times;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750395
