Title :
Direct modulation of d.h. GaAlAs lasers with GaAs m.e.s.f.e.t.s
Author :
Ostoich, V. ; Jeppesen, P. ; Slaymaker, N.
Author_Institution :
Technical University of Denmark, Electromagnetics Institute, Lyngby, Denmark
Abstract :
GaAs m.e.s.f.e.t.s are used to directly modulate d.h. GaAlAs lasers with a 200 Mbit/s pseudorandom, return-to-zero bit stream. The detected light pulses have 100% modulation depth, no significant intersymbol interference, 40 mW of peak power and risetimes and falltimes of 240 ps for a halfpower width of 280 ps.
Keywords :
III-V semiconductors; field effect transistors; optical modulation; semiconductor lasers; 200 Mbit/s pseudorandom return to zero bit stream; DH GaAlAs lasers; GaAs MESFETs; direct modulation; fall times; halfpower width; intersymbol interference; modulation depth; peak power; risetimes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750397
