A 2-D boundary element method approach to the simulation of DMOS transistors

Author

Zhou, Ming-Jiang ; De Smet, Herbert ; De Bruycker, Anita ; Van Calster, André

Author_Institution

Lab. of Electron., Ghent Univ., Belgium

Volume

12

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

810

Lastpage

816

Abstract

A boundary element method is introduced for the calculation of two-dimensional potential and electric field distributions in high-voltage DMOS transistors. An algorithm is proposed to determine the dimensions of the depletion layers in two-dimensional geometries. Regions with different permittivities are taken into account using appropriate boundary conditions. As an application, the high-voltage behavior of the DMOS transistors is investigated, and the avalanche breakdown conditions of the transistors are determined by calculating the ionization integral. The results are compared with simulations based on finite difference methods

Keywords

boundary-elements methods; boundary-value problems; digital simulation; electric fields; electronic engineering computing; impact ionisation; insulated gate field effect transistors; power transistors; semiconductor device models; 2D boundary element method; BEM; DMOS transistors; DMOST; FET; HV devices; avalanche breakdown conditions; boundary conditions; depletion layers; electric field distributions; high-voltage behavior; ionization integral; potential distribution; simulation; two-dimensional geometries; Avalanche breakdown; Boundary conditions; Boundary element methods; Electric potential; Finite difference methods; Finite element methods; Geometry; Helium; Integral equations; Poisson equations;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.229755

Filename

229755