Title :
Transient 2-dimensional simulation of a submicrometre gate-length m.e.s.f.e.t.
Author :
Barnes, J.J. ; Lomax, R.J.
Author_Institution :
University of Michigan, Electron Physics Laboratory Department of Electrical & Computer Engineering, Ann Arbor, USA
Abstract :
The large-signal transient step response of a 0.4 ¿m-gate-length GaAs m.e.s.f.e.t. has been computed with a full 2-dimensional simulation. The falltime is saturated drift velocity limited. Details of this transient calculation and the use of a higher order [O(h4)] finite-element method are described.
Keywords :
field effect transistors; finite element analysis; simulation; GaAs; falltime; finite element method; large signal transient step response; saturated drift velocity limited; submicrometre gate length MESFET; transient 2-dimensional simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750400
