• DocumentCode
    930186
  • Title

    Intractability in linear switch-level simulation

  • Author

    Huang, Lawrence P. ; Bryant, Randal E.

  • Author_Institution
    Carnegie Mellon Univ., Pittsburgh, PA, USA
  • Volume
    12
  • Issue
    6
  • fYear
    1993
  • fDate
    6/1/1993 12:00:00 AM
  • Firstpage
    829
  • Lastpage
    836
  • Abstract
    The linear switch-level model represents a MOS transistor as a voltage-controlled linear resistor and a storage node as a grounded, linear capacitor. For logic simulation, the linear switch-level model offers an attractive tradeoff between resolution/accuracy and computational complexity over gate-level and circuit-level models. However, analysis of MOS networks using the linear switch-level model becomes increasingly difficult in the presence of unknown values, and heuristic methods are often employed. It is shown that the complexity of computing maximum and minimum steady-state voltages of a general MOS network using the linear switch-level model in the presence of unknown values is NP-complete. These results partially justify the use of heuristic methods when unknown values are present
  • Keywords
    MOS integrated circuits; circuit analysis computing; computational complexity; digital simulation; logic CAD; MOS networks; MOS transistor; NP-complete; computational complexity; grounded linear capacitor; heuristic methods; linear switch-level simulation; logic simulation; storage node; switch-level model; voltage-controlled linear resistor; Circuit simulation; Computational complexity; Computational modeling; Computer networks; Logic circuits; MOS capacitors; MOSFETs; Resistors; Switching circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.229758
  • Filename
    229758