DocumentCode :
930186
Title :
Intractability in linear switch-level simulation
Author :
Huang, Lawrence P. ; Bryant, Randal E.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
12
Issue :
6
fYear :
1993
fDate :
6/1/1993 12:00:00 AM
Firstpage :
829
Lastpage :
836
Abstract :
The linear switch-level model represents a MOS transistor as a voltage-controlled linear resistor and a storage node as a grounded, linear capacitor. For logic simulation, the linear switch-level model offers an attractive tradeoff between resolution/accuracy and computational complexity over gate-level and circuit-level models. However, analysis of MOS networks using the linear switch-level model becomes increasingly difficult in the presence of unknown values, and heuristic methods are often employed. It is shown that the complexity of computing maximum and minimum steady-state voltages of a general MOS network using the linear switch-level model in the presence of unknown values is NP-complete. These results partially justify the use of heuristic methods when unknown values are present
Keywords :
MOS integrated circuits; circuit analysis computing; computational complexity; digital simulation; logic CAD; MOS networks; MOS transistor; NP-complete; computational complexity; grounded linear capacitor; heuristic methods; linear switch-level simulation; logic simulation; storage node; switch-level model; voltage-controlled linear resistor; Circuit simulation; Computational complexity; Computational modeling; Computer networks; Logic circuits; MOS capacitors; MOSFETs; Resistors; Switching circuits; Voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.229758
Filename :
229758
Link To Document :
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