Complementary transistor technology for use in optoelectronic integrated circuits

Author

Kiely, P.A. ; Taylor, G.W. ; Docter, D.P. ; Evaldsson, P.A. ; Vang, T.A. ; Tell, B. ; Brown-Goebeler, K.F.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

140

Issue

4

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

279

Lastpage

284

Abstract

A new compound semiconductor complementary transistor technology is proposed and the constituent devices demonstrated in discrete form. The n-channel transistor exhibits a peak transconductance of 110 mS/mm, a drain current density of 24 0 mA/mm and a unity current gain frequency of 9.5 GHz for a nominal gate length of 1 μm. The p-channel transistor has a peak transconductance of 35 mS/mm and a drain current density of 65 mA/mm for an effective gate length of 1.1 μm. Compatibility of this technology with optical devices is shown by fabricating a laser from the same material. Threshold current densities as low as 950 A/cm² and external efficiencies of 50% are obtained

Keywords

field effect integrated circuits; integrated circuit technology; integrated optoelectronics; 1 micron; 1.1 micron; 110 mS; 35 mS; 50 percent; 9.5 GHz; buried channel heterojunction FET; complementary transistor technology; compound semiconductor; inversion channel heterojunction FET; n-channel transistor; optoelectronic integrated circuits; p-channel transistor;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

229778